HfAlO-based ferroelectric memristors for artificial synaptic plasticity

Memristors have received much attention for their ability to achieve multilevel storage and synaptic learning. However, the main factor that hinders the application of memristors to simulate neural synapses is the instability of the formation and breakage of conductive filaments inside traditional memristors, which makes it difficult to simulate the function of biological synapses in practice. However, the resistance change of ferroelectric memristors relies on the polarization inversion of the ferroelectric thin film, thus avoiding the above problem. In this study, a Pd/HfAlO/LSMO/STO/Si ferroelectric memristor is proposed, which can achieve resistive switching properties through the combined action of ferroelectricity and oxygen vacancies. The I–V curves show that the device has good stability and uniformity. In addition, the effect of pulse sequence modulation on the conductance was investigated, and the biological synaptic function and learning behavior were simulated successfully. The results of the above studies provide a basis for the development of ferroelectric memristors with neurosynaptic-like behaviors.