材料科学
光电子学
石墨烯
异质结
神经形态工程学
光探测
晶体管
超短脉冲
纳米技术
电压
光电探测器
计算机科学
光学
人工神经网络
电气工程
工程类
物理
机器学习
激光器
作者
Yuning Li,Zhen Yang,Yuqiang Wang,Jingye Sun,Qing You,Mingqiang Zhu,Linan Li,Tao Deng
标识
DOI:10.1002/adfm.202302288
摘要
Abstract Optoelectronic synapses with information sensing, processing, and memory function are promoting the development of artificial visual perception systems. However, optoelectronic synapses' relatively inferior optoelectronic performance impedes their application in complex neuromorphic computing. Herein, optoelectronic synapses based on 3D graphene/molybdenum disulfide (MoS 2 ) heterostructure field‐effect transistors are developed by using the double stress layer self‐rolled‐up method. The graphene, with excellent electrical properties, enhances the carrier transport capacity of the device. The unique continuous photoconductivity of MoS 2 is suitable for simulating various synaptic nerve morphological functions. Meanwhile, the 3D resonant microcavity is added to enhance the optical field and make the device polarization sensitive, which reveals more intangible features of objects. The device demonstrates room‐temperature photodetection at ultraviolet, visible, near‐infrared, and mid‐infrared regions, with photoresponsivity up to 10 5 A W −1 at 590 nm. Furthermore, multiple synaptic neuromorphic functions, such as inhibitory postsynaptic current, paired‐pulse facilitation, short‐term depression, and long‐term depression, are successfully emulated. Here a new concept is provided for designing high‐performance optoelectronic synapses with polarization sensitivity and excellent potential in artificial intelligence is shown.
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