蓝宝石
金属有机气相外延
材料科学
铁电性
原子层沉积
化学气相沉积
电介质
耗散因子
压电响应力显微镜
相对介电常数
介电常数
分析化学(期刊)
电场
薄膜
电阻率和电导率
介电损耗
压电
电阻式触摸屏
光电子学
图层(电子)
纳米技术
光学
复合材料
化学
外延
激光器
物理
电气工程
工程类
色谱法
量子力学
作者
Fan He,Kunyao Jiang,Y.D. Choi,Benjamin L. Aronson,Smitha Shetty,Jingyu Tang,Bangzhi Liu,Yongtao Liu,Kyle P. Kelley,G. B. Rayner,R. F. Davis,Lisa M. Porter,Susan Trolier‐McKinstry
摘要
κ-Ga2O3 has been predicted to be a potential ferroelectric material. In this work, undoped Ga2O3 films were grown by either plasma-enhanced atomic layer deposition (PEALD) or metal organic chemical vapor deposition (MOCVD) on platinized sapphire substrates. 50 nm thick PEALD films with a mixture of κ-Ga2O3 and β-Ga2O3 had a relative permittivity of ∼27, a loss tangent below 2%, and high electrical resistivity up to ∼1.5 MV/cm. 700 nm thick MOCVD films with predominantly the κ-Ga2O3 phase had relative permittivities of ∼18 and a loss tangent of 1% at 10 kHz. Neither film showed compelling evidence for ferroelectricity measured at fields up to 1.5 MV/cm, even after hundreds of cycles. Piezoresponse force microscopy measurements on bare κ-Ga2O3 showed a finite piezoelectric response that could not be reoriented for electric fields up to 1.33 MV/cm.
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