Impact of Br-doping on the optical and optoelectronic properties of CsPbCl3 crystals

The all-inorganic halide perovskite CsPbX3 (X = I, Br and Cl) with outstanding optoelectronic properties and is expected to be the next generation of optoelectronic detection materials. However, the CsPbCl3 crystal is difficult to grow by low-temperature solution method. Here, we report a series of Br-doped CsPbCl3 crystals by Vertical Bridgman method. Crystal structure, spectra properties and photoelectric performances of CsPbCl3-xBrx single crystals were studied systematically. Photoluminescence (PL), X-ray excited luminescence (XEL) and UV–vis spectra can be tuned by Br-doped in the CsPbCl3 crystals. Furthermore, the basic photoelectric properties were investigated for Br-doped CsPbCl3 crystals and the optimum component of CsPbBr2.64Cl0.36 crysatal displays the highest resistivity of 2.8 × 109 Ω cm, and an on/off ratio of ∼ 25. Our work provides a feasible strategy for optimizing the photoelectric properties of doped halide perovskite crystal.