Depth-distribution of resistivity within ion-irradiated semiconductor layers revealed by low-kV scanning electron microscopy

Low-kV scanning electron microscopy imaging was used to visualize the 2D profiles of internal resistivity distribution in 600 keV He2+ ion-irradiated epitaxial GaAs and Al(0.55)Ga(0.45)As. The influence of the dopant concentration on DIVA (damage-induced voltage alteration) contrast formation has been studied in this paper. The threshold irradiation fluencies (the fluencies below which no damage-related contrast is observed) were defined for each studied material. The results show that the same level of damage in the material caused by ion irradiation becomes visible at lower threshold fluence in the case of lower-doped sample of the same composition. The aluminum content in the composition of materials exposed to ion irradiation and subsequent DIVA contrast formation mechanism was considered as well. The carrier concentration in irradiated layers has been studied by Raman spectroscopy and photoluminescence measurements, which confirmed that the increase of the resistivity of the material caused by ion-irradiation damage generation is resulting from the formation of deep states in the bandgap trapping free carriers.