High‐Performance GaN/BAs Heterojunctions: Dual Functionality of BAs for Enhanced Electrical and Thermal Management in Power Electronics

, with atomic characterizations revealing enhanced performance at intermediate layer thicknesses below 20 nm. On the thermal front, BAs significantly improve heat dissipation outperforming GaN configurations under identical conditions. The fabrication of dual-functional BAs-based structures, where BAs works as an active p-type semiconductor and an efficient cooling substrate simultaneously, highlights its potential for next-generation power electronics, where both electrical performance and thermal management are crucial.