背光
荧光粉
材料科学
光电子学
纳米技术
液晶显示器
作者
Jianyan Ding,Quansheng Wu
出处
期刊:Dalton Transactions
[Royal Society of Chemistry]
日期:2024-01-01
卷期号:53 (37): 15403-15411
被引量:8
摘要
The development of novel narrow-band emitting phosphors with high efficiency and stability is of great significance for WLED backlights. In recent years, the research on Bi3+-activated narrow-band emitting phosphors has gained significant attention for developing novel phosphors for WLED backlight applications. This Frontiers article presents recent advances in Bi3+-activated narrow-band emitting phosphors, encompassing their coordination environment and photoluminescence properties. The latest advancements in Bi3+-activated narrow-band emitting phosphors are categorized into four types based on host materials: germanate, silicate, borate, and other hosts. Additionally, detailed discussions are provided on the challenges associated with developing novel Bi3+-activated narrow-band emitting phosphors and potential research directions for future work. Overall, the Bi3+-activated narrow-band emitting phosphors have demonstrated great potential for WLED backlights; however, significant efforts are still required to enhance their comprehensive performance in order to meet practical application requirements.
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