Enhanced Photobolometric Effect in an All-Semimetal van der Waals Heterostructure

heterostructure demonstrates an improved photobolometric effect in the junction area at low temperatures, which can be adjusted by modifying the length of the photosensitive channel. The generated photocurrent in different areas of the device exhibits varying temperature dependencies, and the photoresponse remains detectable up to room temperature with a commendable signal-to-noise ratio. These findings offer valuable insights into the design and advancement of thin-film optoelectronic devices, with the aim of achieving exceptional performance and unique functionality.