磁力显微镜
材料科学
外延
纳米技术
磁化
物理
磁场
量子力学
图层(电子)
作者
Shinji Isogami,Kosuke Imamura,Ryota Kuwayama,Kaoru Abe,Mitsuru Ohtake,Marina V. Makarova,Hitoshi Saito
标识
DOI:10.1088/1361-6463/ad9285
摘要
Abstract Noncoplanar magnetic structures in the Mn 4 N epitaxial thin films grown on the 001-oriented MgO and SrTiO 3 (STO) substrates were studied, based on the measurements of topological Hall effect (THE) and the observation of magnetic domain nucleation. The typical nucleation diameter of domain was determined using an alternating magnetic force microscope, which proved advantageous for the visualization of the domain with an out-of-plane magnetic component. The nucleation diameter of the domains on the MgO substrate were ∼150 nm for the thickness of 30 nm and ∼110 nm for 10 nm, while ∼130 nm for 30 nm on the STO substrate. The value of THE was one or two orders of magnitude larger than that estimated based on the nucleation diameter, indicating that the existence of a noncoplanar magnetic structure is the primary factor contributing to the THE in the Mn 4 N films, comparing to the effect from domain nucleation. The noncoplanar magnetic structure was more pronounced with decreasing thickness and substrate-induced strain.
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