材料科学
碳化硅
MOSFET
光电子学
晶体管
辐射
工程物理
辐射损伤
阈值电压
可靠性(半导体)
抗辐射性
电压
电气工程
物理
工程类
功率(物理)
光学
冶金
量子力学
作者
Tamana Baba,Naseeb Ahmed Siddiqui,Nur Ubaidah Saidin,Siti Harwani Md Yusoff,S.F. Abdul Sani,Julia Abdul Karim,Nurul Fadzlin Hasbullah
标识
DOI:10.1016/j.mseb.2023.117096
摘要
Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have gained significant attention due to their ability to achieve lower on-resistance, reduced switching losses, and higher switching speeds. However, when exposed to radiation-rich environments, SiC MOSFETs can experience radiation-induced charge build-up, leading to degradation and potential failure. This article provides a critical review focusing on the consequences of different types of radiation, including gamma rays, heavy ions, electrons, protons, and neutrons, on SiC MOSFETs. The impact of radiation on crucial parameters of MOSFETs such as threshold voltage, mobility, leakage current, and state resistance are discussed. The review aims to analyze in detail how radiation affects these parameters and the resulting consequences for SiC MOSFET performance. By exploring the effects of various radiation types on SiC MOSFETs, the article contributes to a comprehensive understanding of the challenges associated with radiation-induced degradation in these devices. This understanding is essential for developing strategies to mitigate the detrimental effects of radiation and enhance the reliability and performance of SiC MOSFETs in radiation-prone environments.
科研通智能强力驱动
Strongly Powered by AbleSci AI