Investigation on infrared electroluminescence from Er3+-doped Tb2O3 light-emitting diodes

Tb 2 O 3 :Er light-emitting diodes were prepared by radio-frequency magnetron sputtering method and the EL performance of the devices were studied. The crystal structure and morphology of the annealed films were investigated by XRD and SEM, respectively. The EL spectrum was achieved and the EL principle was discussed. Six emission peaks of Er[Formula: see text] located at 402, 517, 548, 649, 691, and 1,538[Formula: see text]nm were observed, achieving energy transfer from Tb[Formula: see text] to Er[Formula: see text]. In order to study the effect of Er + doping concentration, the doping concentrations of Tb 2 O 3 :Er films were from 5[Formula: see text]at.% to 20[Formula: see text]at.%. The effect on electroluminescence intensity of doping concentration was investigated and the optimal doped concentration was 15[Formula: see text]at. %.