JFET公司
共栅
电压
MOSFET
电气工程
网络拓扑
阻塞(统计)
电子线路
计算机科学
拓扑(电路)
电子工程
高压
晶体管
场效应晶体管
工程类
计算机网络
作者
Lee Gill,Luciano Andres Garcia Rodriguez,Jacob Mueller,Jason C. Neely
标识
DOI:10.1109/ecce47101.2021.9595065
摘要
In spite of several advantages of SiC JFETs over enhancement mode SiC MOSFETs, the intrinsic normally-ON characteristic of the JFETs can be undesirable for many industrial power conversion applications due to the negative turn-OFF voltage requirement. This prevents normally-ON JFETs from being widely accepted in industry. However, a cascode configuration, which uses a low voltage (LV) Si MOSFET can be used to enable a normally-OFF behavior, making this approach an attractive solution to utilize the benefits of SiC JFETs. For medium-, and high-voltage applications that require larger blocking voltage than the rating of each JFET, additional devices can be connected in series to increase the overall blocking voltage capability, creating a super-cascode configuration. This paper provides a review of several super-cascode topology variations and presents a comprehensive comparative study, evaluating similarities and differences in operating principles, equivalent circuits, and design considerations and limitations.
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