绝缘体上的硅
材料科学
波导管
耦合损耗
表面光洁度
表面粗糙度
光学
散射
光电子学
插入损耗
光纤
硅
复合材料
物理
作者
Frédéric Grillot,Laurent Vivien,S. Laval,Daniel Pascal,Éric Cassan
标识
DOI:10.1109/lpt.2004.828497
摘要
Silicon-on-insulator (SOI) optical waveguides with high electromagnetic field confinement suffer from sidewall roughness which is responsible for strong scattering effects. This letter reports a numerical investigation on the size influence of ultrasmall SOI waveguides on the propagation loss due to sidewall roughness. It is shown that for a size smaller than 260 /spl times/ 260 nm the roughness-induced propagation loss decreases. As the optical mode confinement is reduced, a very low loss light coupling from and to a single-mode fiber can be achieved with propagation loss as low as 0.5 dB/cm for a 150 /spl times/ 150 nm cross-sectional waveguide.
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