Experimental study of parasitic inductance influence on SiC MOSFET switching performance in Matrix converter

This paper presents an experimental parametric study of parasitic inductance influence on SiC MOSFET switching waveforms in matrix converter. The two most critical parasitic inductances have been studied and compared in terms of their effect on waveform ringing, switching loss and device stress. Knowledge about the effects of parasitic inductances on the switching behavior serves as an important basis for the design guideline of fast switching matrix converter.