Silicon Oxycarbide Glasses: Part 1—Thermochemical Stability

乙烯基三乙氧基硅烷 热重分析 三乙氧基硅烷 热稳定性 碳纤维 热解 分解 材料科学 热分解 化学工程 化学 物理化学 硅烷 有机化学 复合数 复合材料 工程类
作者
Jérôme Latournerie,Phillip Dempsey,D. Hourlier,Jean‐Pierre Bonnet
出处
期刊:Journal of the American Ceramic Society [Wiley]
卷期号:89 (5): 1485-1491 被引量:44
标识
DOI:10.1111/j.1551-2916.2005.00869.x
摘要

Silicon oxycarbide glasses (Si/C/O) of various compositions have been obtained after pyrolysis of polysiloxane gels produced by the sol–gel method. Four gels were synthesized from various structures of silicon precursors: MTES issued from methyltriethoxysilane CH 3 Si(–OEt) 3 , VTES from vinyltriethoxysilane CH 2 =CH–Si(–OEt) 3 , PTES from phenyltriethoxysilane C 6 H 5 –Si(–OEt) 3 and D H T H 1/9 for that issued from the 1/9 molar ratio of methyldiethoxysilane D H (CH 3 )HSi–(OEt) 2 and T H triethoxysilane HSi(–OEt) 3 . The resulting materials at 1000°C can be described as an oxycarbide phase with the presence of either an excess of carbon or silicon depending on the starting structure of the precursor used to prepare the gels. By thermogravimetric analysis (TGA) coupled with mass spectrometry (MS), we followed the thermal behavior of each compound from 1000° to 1500°C. Based on these results and chemical analysis data, we have established the main reactions that occur during the decomposition of the oxycarbide glasses. At low temperature ( T <1400°C), the dominant mechanism for carbon‐rich materials first involves a solid‐state reaction of SiO 2 and C leading to SiC formation and removal of CO. That reaction proceeds at high temperature (above 1400°C), as long as the amount of carbon in the material is high enough (PTES). When the system is depleted of its free carbon (VTES, MTES), however, another reaction can also proceed parallel to the former one, where SiO 2 and SiC react leading to a loss of SiO and CO. The combination of an excess of silicon and a dense state of the material improves the thermo‐chemical stability of the silicon oxycarbide phase present in the D H T H 1/9 glass. By placing the chemical compositions in the ternary Si–C–O diagram, we could then determine the evolution at high temperature of any system of mixed Si/C x /O y phases.
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