High speed linear CCD sensors with pinned photodiode photosites

In this work we describe two families of linear image sensors which incorporate pinned photodiode (PPD) photosites. In a PPD photosite the n/sup +/ region of the conventional photodiode is replaced by an n region and a shallow highly doped p region. The high quantum efficiencies associated with conventional photodiodes are maintained while allowing for large reductions in image lag and fixed pattern noise which are associated with conventional photodiodes.