炼金术中的太阳
电致发光
光电子学
带隙
半导体
开路电压
多激子产生
太阳能电池
材料科学
辐射传输
自发辐射
宽禁带半导体
电压
物理
光学
纳米技术
量子力学
图层(电子)
激光器
作者
Antonio L. Luque,P.G. Linares,E. Antolín,Iñigo Ramiro,Corrie D. Farmer,E. Hernández,I. Tobı́as,Colin R Stanley,Antonio Martı́
摘要
In this paper, a model for intermediate band solar cells is built based on the generally understood physical concepts ruling semiconductor device operation, with special emphasis on the behavior at low temperature. The model is compared to JL-VOC measurements at concentrations up to about 1000 suns and at temperatures down to 20 K, as well as measurements of the radiative recombination obtained from electroluminescence. The agreement is reasonable. It is found that the main reason for the reduction of open circuit voltage is an operational reduction of the bandgap, but this effect disappears at high concentrations or at low temperatures.
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