钼
材料科学
聚芴
佩多:嘘
电极
氧化物
聚苯乙烯磺酸盐
聚苯乙烯
X射线光电子能谱
聚合物
电导率
光电子学
分析化学(期刊)
化学工程
化学
复合材料
物理化学
共聚物
有机化学
冶金
工程类
作者
Alastair Buckley,David F. Pickup,Chris Yates,Yi Zhao,David G. Lidzey
摘要
We report spectroscopic and electrical measurements to explore hole injection and conduction in devices comprising a molybdenum sub-oxide (MoOx) hole injection layers and poly[(9,9-dioctylfluorenyl-2, 7-diyl)-co-(4,4’(N-(4-sec-butylphenyl))) diphenylamine](TFB) hole transporting polymer. We report improvements in device conductivity over benchmark structures incorporating an ITO electrode and polyethylenedioxythiophene polystyrene sulfonate (PEDOT:PSS) hole injection layers and furthermore achieve injection from MoOx to TFB that is efficient even with an underlying low workfunction Al electrode. XPS spectroscopy has been used to investigate the electronic structure of the interfaces and we find discrete energy alignment regimes consistent with recent surface science studies by Tengstedt et al. [Appl. Phys. Lett. 88, 053502 (2006)], corresponding to Fermi level pinning for MoOx/TFB and vacuum level pinning in the case of Al/TFB. While the energetic alignment regime is measured to be independent of MoOx thickness, the device conductivity continuously varies with MoOx thickness; an observation that can be qualitatively explained by considering two independent charge injection mechanisms from molybdenum oxide sites having different stoicheometry.
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