材料科学
二硫键
电介质
电容感应
二硫化钼
分子间力
储能
工作(物理)
电场
化学工程
联轴节(管道)
电荷(物理)
分析化学(期刊)
调制(音乐)
二硫化钨
光电子学
温度循环
聚酰亚胺
热稳定性
热膨胀
纳米技术
电容
稀释
电化学
纳米颗粒
作者
Xinzhe Wu,Zhuo Wang,Liping Ding,Yuchen Guo,Pan Gao,Hongyu Yang,Ye Tian,Hang Liu,Chenhui Yang,Zhilun Lu,Daniel Q. Tan,Zixiong Sun
出处
期刊:Small
[Wiley]
日期:2026-09-09
卷期号:: e75627-e75627
摘要
ABSTRACT Conventional PI films exhibit excellent thermal stability; however, their weak self‐healing under electrical and mechanical stress limits operational reliability. Herein, a machine‐learning‐guided screening strategy is employed to predict the E b of sulfur‐modulated PI systems, enabling the rapid identification of optimal disulfide incorporation. As a result, a series of PI films with varying disulfide contents (0–30 wt.%) are fabricated. The results reveal a non‐monotonic dependence of E b on disulfide content, with an optimal composition (PI‐15) achieving a high E b of 700 kV mm −1 and a W dis of 10.02 J cm −3 at RT, together with 670 kV mm −1 and 6.64 J cm −3 at 150°C. Notably, after self‐healing, PI‐15 retains high performance, with E b recovering to 675 and 640 kV mm −1 and W dis to 8.59 and 6.02 J cm −3 at RT and 150°C, respectively. In addition, the films exhibit excellent operational stability under temperature, frequency, and fatigue cycling at 500 kV mm −1 . Mechanistically, disulfide incorporation enables a synergistic coupling of strengthened intermolecular interactions and dynamic bond exchange, suppressing charge transport and local field concentration while facilitating structural rearrangement. This work demonstrates new working mechanisms for designing high‐performance PI, providing strong potential for high‐temperature capacitive energy storage under harsh operating conditions.
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