异质结
材料科学
光电子学
硫化镉
化学浴沉积
兴奋剂
光伏系统
混合太阳能电池
沉积(地质)
太阳能电池
导带
串联
太阳能
等离子太阳电池
薄膜
硫化铅
电子能带结构
带隙
碲化镉光电
能量转换效率
聚合物太阳能电池
载流子
硫化锌
带材弯曲
硒化铜铟镓太阳电池
纳米技术
量子点太阳电池
化学工程
太阳能电池效率
硫化物
电场
纳米晶
宽禁带半导体
热液循环
作者
Yonghao Liu,Hui Deng,Qiqiang Zhu,Changbiao Peng,Yunfeng Lai,Jionghua Wu,P. S. D. Lin,Weihuang Wang,Shuying Cheng
出处
期刊:Energy materials
[OAE Publishing Inc.]
日期:2026-01-05
卷期号:6 (2)
标识
DOI:10.20517/energymater.2025.176
摘要
Antimony sulfide (Sb2S3) solar cells exhibit significant potential in tandem and indoor photovoltaic applications. The quality of cadmium sulfide (CdS)/Sb2S3 heterojunction, affected by energy-level misalignments and lattice-mismatch defects, is crucial for achieving high-performance devices. Herein, we propose a MgCl2-CdCl2 mixed treatment strategy for the CdS/Sb2S3 interface to suppress interfacial recombination caused by defects and energy band offsets. The obtained preferentially [100]-oriented CdS film effectively mitigates lattice mismatch and induces the subsequent hydrothermal deposition of a well-crystallized, vertically oriented Sb2S3 absorber. The MgCl2-CdCl2 mixed treatment introduces Mg2+ doping in the CdS layer, achieving an enhanced surface potential and well-matched interfacial energy band alignments. The CdS/Sb2S3 heterojunction interface forms a spike-type energy band structure with a small conduction band offset. Compared with the conventional CdCl2 treatment, the MgCl2-CdCl2 mixed-treated device exhibits a stronger built-in electric field (1.31 V) and low-temperature activation energy (1.63 eV), indicating the suppression of carrier recombination. Consequently, the champion Sb2S3 solar cells achieve an improved efficiency from 7.5% to 8.1%. This heterojunction treatment strategy is expected to provide an effective method for fabricating high-performance inorganic thin film solar cells.
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