THE n-TYPE METAL-SEMICONDUCTOR In/Nb-SrTiO_-3 SCHOTTKY BARRIER DIODES

The In/Nb-doped SrTiO-3 Schottky Junctions, fabricated using a proper surface treatment of the STO:Nb and in situ deposition of In, were investigated in detail. Current-voltage characteristics have shown the differences with the ideal Schottky Junctions about temperature-dependent and voltage-dependent changes, Using a Schottky transport theory, we have performed computer simulation of the parameters to analyze the differences of the Schottky Junctions. As the new oxides semiconductor material there should be many departures in the Schottky junctions.