InGaAs NIR Detector Epitaxial Design and Device Fabrication

This article uses semiconductor simulation software to simulate the composition and thickness of the epitaxial structure of the InGaAs near-infrared detector. By optimizing and adjusting different parameters, the surface dark current control of the detector structure is realized, making the overall performance of the infrared detector has been improved. The calculation results show that by reducing the thickness of the intrinsic layer within a certain range, the surface dark current of the device can be appropriately reduced, and the minimum dark current can be obtained under certain epitaxial doping. Under the condition of preparing the passivation layer, through a series of preparation processes such as metallization, the final InGaAs detector is obtained, and the test results of the detector are consistent with the calculation, and the dark current is controlled at the level of nA, which can be used for near infrared short-wave imaging.