凝聚态物理
单层
材料科学
反铁磁性
自旋电子学
磁性半导体
铁磁性
晶体缺陷
磁性
居里温度
兴奋剂
化学物理
纳米技术
化学
物理
作者
Rui Wang,Yan Su,Guohui Yang,Junfeng Zhang,Shengbai Zhang
标识
DOI:10.1021/acs.chemmater.9b04645
摘要
As a two-dimensional direct band gap semiconductor with unique electronic and magnetic properties, monolayer chromium triiodide (CrI3) has a great potential for spintronic applications. Under the guidance of the defect theory, we adopt first-principles calculation to determine the structural, thermodynamic, electronic, and magnetic properties of point defects of monolayer CrI3. Twenty kinds of point defects, including vacancies, interstitial, substitution, and bond-rotation defects have been investigated. Either the metalloid or metallic single atom vacancies is energetically stable depends on the chemical potential of iodide, leading to the intrinsic n-type and p-type dopings, respectively. More interestingly, a ferromagnetic to antiferromagnetic transition of the magnetic phase can be induced for most type of point defects, which can be explained by a simple Heisenberg model. The content of present investigation contributes to the atomic-scale understanding of the electric and magnetic properties of monolayer CrI3.
科研通智能强力驱动
Strongly Powered by AbleSci AI