Analysis of dark current generated by long-wave infrared HgCdTe photodiodes with different implantation shapes

Resistance-voltage curves of B+-implanted n-on-p Hg1-xCdxTe long-wavelength infrared photodiodes with different implantation unit shapes were measured for temperatures in the 20–140 K range. The response spectrum of the device was measured, and the response cutoff wavelength was 11.45 μm. By fitting the experimental data, R0A at different temperatures and the dark current at different bias voltages of the two long-wavelength diodes were calculated theoretically. The results demonstrate that the response spectrum of the device is affected by the implantation shape. The temperature transformation point of the dominant dark current was 40 K, and correlations between some parameters were also demonstrated.