四方晶系
掺杂剂
材料科学
超导电性
铁基超导体
凝聚态物理
兴奋剂
格子(音乐)
剩余电阻率
电阻率和电导率
晶体结构
结晶学
化学
物理
量子力学
光电子学
声学
作者
J S Kim,Derrick VanGennep,J. J. Hamlin,Xiaoping Wang,Athena S. Sefat,G. R. Stewart
标识
DOI:10.1088/1361-648x/aae3cf
摘要
Recent superconducting transition temperatures (Tc) over 100 K for monolayer FeSe on SrTiO3 have renewed interest in the bulk parent compound. In KCl:AlCl3 flux-transport-grown crystals of FeSe0.94Be0.06, FeSe0.97Be0.03 and, for comparison, FeSe, this work reports doping of FeSe using Be—among the smallest of possible dopants, corresponding to an effective 'chemical pressure'. According to lattice parameter measurements, 6% Be doping shrank the tetragonal FeSe lattice equivalent to a physical pressure of 0.75 GPa. Using this flux-transport method of sample preparation, 6% of Be was the maximum amount of dopant achievable. At this maximal composition of FeSe0.94Be0.06, the lattice unit cell shrinks by 2.4%, Tc—measured in the bulk via specific heat—increases by almost 10%, the Tc versus pressure behavior shifts its peak downwards by ~1 GPa, the high temperature structural transition around TS = 89 K increases by 1.9 K (in contrast to other dopants in FeSe which uniformly depress TS), and the low temperature specific heat γ increases by 10% compared to pure FeSe. Also, upon doping by 6% Be the residual resistivity ratio, ρ(300 K)/ρ(T → 0), increases by almost a factor of four, while ρ(300 K)/ρ() increases by 50%.
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