量子位元
磁通量子比特
电荷量子位
激发态
单重态
自旋(空气动力学)
光电子学
物理
相位量子位
原子物理学
材料科学
量子
量子力学
热力学
作者
Song Li,Gergő Thiering,Péter Udvarhelyi,Viktor Ivády,Ádám Gali
标识
DOI:10.1038/s41467-022-28876-7
摘要
Identifying and fabricating defect qubits in two-dimensional semiconductors are of great interest in exploring candidates for quantum information and sensing applications. A milestone has been recently achieved by demonstrating that single defect, a carbon atom substituting sulphur atom in single layer tungsten disulphide, can be engineered on demand at atomic size level precision, which holds a promise for a scalable and addressable unit. It is an immediate quest to reveal its potential as a qubit. To this end, we determine its electronic structure and optical properties from first principles. We identify the fingerprint of the neutral charge state of the defect in the scanning tunnelling spectrum. In the neutral defect, the giant spin-orbit coupling mixes the singlet and triplet excited states with resulting in phosphorescence at the telecom band that can be used to read out the spin state, and coherent driving with microwave excitation is also viable. Our results establish a scalable qubit in a two-dimensional material with spin-photon interface at the telecom wavelength region.
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