Electrical and optical characteristics of vanadium in 4H-SiC

A semi-insulating layer is obtained in N -type 4H-SiC by vanadium-ion implantation. A little higher resistivity is obtained by increasing the annealing temperature from 1450 to 1650 °C. The resistivity at room temperature is as high as 7.6 × 10 6 Ω.cm. Significant redistribution of vanadium is not observed even after 1650 °C annealing. Temperature-dependent resistivity and optical absorption of V-implanted samples are measured. The activation energy of vanadium acceptor level is observed to be at about E C - 1.1 eV.