Single-Wafer Processing And Real-Time Process Control For Semiconductor Integrated Circuit Manufacturing
作者
A. Bowling
标识
DOI:10.1109/issm.1994.729417
摘要
For 300 mm and larger diameter silicon wafer processing, it is clear that single-wafer processing will play a dominant role. In addition to current use of single-wafer processing for lithography, plasma etch, and metal deposition, recent research has shown that single-wafer processing will even displace most batch furnace processes and wafersurface preparation processes. In addition, the implementation of in-situ sensors will allow the use of real-time process control to improve process reproducibility and equipment utilization.