放大器
宽带
单片微波集成电路
多波段设备
电气工程
电压
调制(音乐)
光电子学
材料科学
脉冲宽度调制
物理
电子工程
工程类
光学
天线(收音机)
CMOS芯片
声学
作者
Andreas Wentzel,Serguei Chevtchenko,P. Kurpas,W. Heinrich
标识
DOI:10.1109/mwsym.2013.6697417
摘要
This paper presents a compact dual-band voltage-mode class-D power amplifier module suitable for the LTE frequency bands at 0.8 GHz and 1.8 GHz. It uses a broadband GaN voltage-mode PA MMIC and a hybrid lumped element dual-band filter structure. The amplifier can handle various pulse-mode or digital modulation schemes. For a pulse-width modulated input signal the PA achieves a maximum output power of 5.4 W at 0.85 GHz and 4.3 W at 1.8 GHz. Peak drain efficiency is 84% and 54% for 0.85 GHz and 1.8 GHz, respectively. At 6 dB power back-off, drain efficiencies of 40% (0.85 GHz) and 25% (1.8 GHz) are obtained.
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