Single-step rapid trench filling with poly-Si using concentration dependence of deposition rate under a SiHCl3–H2 system

A single-step rapid trench filling with poly-Si was demonstrated using SiHCl3, which advantageously has a high decomposition temperature and contains an etching gas. Through elementary reaction rate analysis, we found a unique condition in which the film deposition rate decreased as the source concentration increased. This negative correlation between the concentration and deposition rate is referred to in this study as NCCR. Through cross-sectional observation, we confirmed that under the NCCR condition, the trench was filled without clogging at a rate that was 60 times faster than conventional low-pressure chemical vapor deposition.