a—Si：H—TFT阈值电压漂移机理及其在驱动OLED显示中的补偿设计

The mechanisms for a-Si: H-TFT threshold voltage shift were analyzed. That is, the influence of charges injecting into SiN(subscript x): H gate insulator and the creation of meta-stable states in a-Si: H to a-Si: H-TFT threshold voltage shift under gate bias stress were analyzed. According to the characteristics of the meta-stable states in a-Si: H, and two a-Si: H TFT pixel circuit driving OLED display, a new data signal timing in order to compensate the threshold voltage shift was designed. That is, one compensative signal, whose polarity was inverse to data signal, was inserted between data signals. By this kind of signals with alternative polarity, positive and negative respectively, the threshold voltage shift for driving TFT, resulting from the meta-stable states in a-Si: H, would be kept in a dynamic equilibrium process, thus to realize OLED lighting stability.