兴奋剂
材料科学
杂质
价(化学)
接受者
Atom(片上系统)
电子结构
费米能级
折射率
价带
波长
金属
凝聚态物理
分析化学(期刊)
带隙
光电子学
物理
化学
电子
量子力学
嵌入式系统
色谱法
冶金
计算机科学
作者
Liying Zhang,Jin Yan,Yijun Zhang,Ting Li
出处
期刊:Chinese Physics B
[IOP Publishing]
日期:2012-06-01
卷期号:21 (6): 067102-067102
被引量:12
标识
DOI:10.1088/1674-1056/21/6/067102
摘要
The electronic structures and the optical properties of N-doped β-Ga2O3 with different N-doping concentrations are studied using the first-principles method. We find that the N substituting O(1) atom is the most stable structure for the smallest formation energy. After N-doping, the charge density distribution significantly changes, and the acceptor impurity level is introduced above the valence band and intersects with the Fermi level. The impurity absorption edges appear to shift toward longer wavelengths with an increase in N-doping concentration. The complex refractive index shows metallic characteristics in the N-doped β-Ga2O3.
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