与非门
可靠性(半导体)
闪光灯(摄影)
计算机科学
平面的
电信
物理
操作系统
量子力学
光学
频道(广播)
功率(物理)
作者
Christian Monzio Compagnoni,Akira Goda,Alessandro S. Spinelli,Peter Feeley,Andrea L. Lacaita,A. Visconti
出处
期刊:Proceedings of the IEEE
[Institute of Electrical and Electronics Engineers]
日期:2017-03-28
卷期号:105 (9): 1609-1633
被引量:228
标识
DOI:10.1109/jproc.2017.2665781
摘要
This paper reviews the recent historical trends of the NAND Flash technology, highlighting the evolution of its main parameters and explaining what allowed it to become not only the most important integrated solution for nonvolatile storage of high volumes of data but also a strong rival eroding the market share of hard-disk drives. The scaling trend followed by planar arrays will be discussed with close attention, along with the major physical constraints impacting the performance and the reliability of modern deca-nanometer technologies. This will make clear why the development of further planar nodes with feature size below ~15 nm, representing today's state of the art, can be considered less favorable than turning all the efforts toward the integration of 3-D arrays. The most promising 3-D architectures will then be reviewed, discussing their benefits and issues and addressing the impact of the change of the integration paradigm from the standpoint of the major NAND applications.
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