Photoanodes: Optimization of the Photo-Electrochemical Performance of Mo-Doped BiVO4 Photoanode by Controlling the Metal-Oxygen Bond State on (020) Facet (Adv. Mater. Interfaces 10/2017)

Oxygen vacancy on the surface of BiVO4 photoanode is a double-edged sword for the photoelectrochemical performance. It can increase the free charge density of BiVO4, but inducing the recombiation of free photogenerated carriers. In article number 1601235, Weibin Li, FengHui Tian, Jin-Ping Ao, and co-workers demostrate that quasi-oxygen vacancy forming on the surface of the BiVO4 active facet is the true reason to improve the photoelectrochemical performance of it.