暗电流
深能级瞬态光谱
光电探测器
光电子学
材料科学
存水弯(水管)
波长
偏压
探测器
吸收(声学)
光电效应
电流(流体)
X射线吸收光谱法
电压
吸收光谱法
光学
物理
硅
热力学
气象学
复合材料
量子力学
作者
Xiaoli Ji,Baiqing Liu,Yue Xu,Hengjing Tang,Xue Li,Haimei Gong,Bo Shen,Xuelin Yang,Ping Han,Feng Yan
摘要
The dark current mechanism of extended wavelength InxGa1−xAs photo-detectors is still a debated issue. In this paper, the deep-level transient spectroscopy (DLTS) and dark current characteristics of InxGa1−xAs/InP detectors are investigated. Using trap parameters obtained from DLTS measurement, the device simulations of current-voltage characteristics are carried out by Silvaco Altas. The results reveal that the dark current at the low reverse bias voltage is associated with deep level trap induced trap assisted tunneling and Shockley-Read-Hall generation mechanism. The reduction of the deep level trap concentration in InxGa1−xAs absorption layer could dramatically suppress the dark current near zero bias in extended wavelength InxGa1−xAs/InP detectors.
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