背板
有源矩阵
NTSC公司
薄膜晶体管
材料科学
光电子学
液晶显示器
LED显示屏
全彩
计算机科学
电气工程
计算机硬件
工程类
纳米技术
传输(电信)
图层(电子)
作者
Hyo Min Kim,Jiseob Lee,Sung Min Park,Wonseok Choi,Soohyun Kim,Ki Seong Jeon,Yoon Ho Choi,Jeong Soo Lee,Jin Jang
摘要
A full color, active matrix micro‐LED (AMLED) display using dual‐gate (DG) a‐IGZO TFT and lateral micro‐LED chip is demonstrated. It is found that DG a‐IGZO TFT backplane is suitable for driving large area, full color micro‐LED display. In this research, the driving TFTs for red, green and blue µ‐LEDs exhibit a uniform threshold voltage (V th ) and linear mobility characteristics as 0.4, 0.3 and 0.3 V, and 7.79, 7.83 and 7.78 cm 2 /Vs, respectively. Also, the full color AMLED display has a 58 ppi with diagonal 2‐inch and exhibits the wide color triangle as 110.5 % in National Television System Committee (NTSC) 1931.
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