铟
材料科学
原子层沉积
薄膜
沉积(地质)
半导体
氧化物
化学气相沉积
微观结构
化学工程
大气温度范围
分析化学(期刊)
相(物质)
纳米技术
图层(电子)
光电子学
化学
冶金
有机化学
沉积物
气象学
古生物学
工程类
物理
生物
作者
Jung Hoon Lee,Jiazhen Sheng,Hyesung An,Tae Hyun Hong,Hyun You Kim,Hyun Kyung Lee,Jang Hyeon Seok,Jung-Woo Park,Jun Hyung Lim,Jin-Seong Park
标识
DOI:10.1021/acs.chemmater.0c02306
摘要
Indium oxide (In2O3) thin films were deposited via thermal atomic layer deposition (ALD) to exploit their potential as semiconductors in thin-film transistors (TFTs), using a new liquid type indium complex precursor (In(CH3)3[CH3OCH2CH2NHtBu]). In2O3 films were deposited successfully at lower temperatures and exhibited a satisfactory growth rate (∼0.35 Å per cycle). In addition, we investigated the effect of deposition temperature from 100 to 250 °C on the microstructure and chemical and physical properties of In2O3 films. Interestingly, the In2O3 film had a clear rhombohedral structure at deposition temperatures from 100 to 150 °C. For the 200 and 250 °C deposition temperatures, the phase of In2O3 transformed to a cubic structure. The crystalline structure of the In2O3 film was extremely sensitive to deposition temperatures, giving rise to a wide range of tunable physical and electrical properties. Based on a comparison of comprehensive structural transmission electron microscopy analysis, density functional theory calculations, and systematic experimental measurements, we explored the possibility of TFTs with an ALD-processed In2O3 layer as a semiconductor.
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