Artificial multiferroic heterostructures—electric field effects and their perspectives

Artificial multiferroic heterostructures, that is to say, ferromagnetic/ferroelectric heterostructures, have been the subject of considerable research interest as a potential material basis for the creation of novel energy-efficient device applications. Given that polarization reversal occurs in ferroelectric materials when an electric field is applied, it is possible to modulate the magnetic properties of a ferromagnetic layer due to changes in the polarization charge associated with a ferroelectric material, or due to exchange coupling, ionic transport, or orbital hybridization at the interface between the ferromagnetic and ferroelectric materials. Another essential characteristic of ferroelectric materials is their inverse piezoelectricity, which induces strain through the application of an electric field. The inverse piezoelectric strain is transferred to the ferromagnetic layer, thereby modulating the magnetic properties due to the magnetoelastic effect. In comparison to the various effects, the influence of strain transfer on magnetic properties is particularly pronounced, offering promising avenues for controlling magnetic properties via an electric field without the use of an electric current. This review article aims to present an overview of recent developments in the field of electric field effects on magnetic properties, with a particular focus on the role of strain transfer in magneto-electric effects. The potential applications of artificial multiferroic heterostructures are discussed, including the control of magnetic anisotropy, as well as the manipulation of perpendicular magnetic anisotropy, magnetoresistance, interlayer exchange coupling, spin wave propagation, spin damping, magnetic phase, and superconductivity. The article concludes with a consideration of the future prospects of artificial multiferroic heterostructures for next-generation device applications.