Progress in EUV Photoresists for High-Resolution Patterning

The high-NA extreme ultraviolet (EUV) lithography scanner, which will push the resolution limit to single-digit nm half pitch in a single exposure step, is predicted to be introduced for the most advanced technology node in a few years. To successfully print such fine patterns with enough sensitivity and low roughness, entirely new photoresist platforms superior to traditional organic polymer-based chemically amplified resists (CAR) are essential. We have been pursuing novel high-resolution photoresist material under the assumption that incorporating inorganic atoms and precise control of molecular sizes and structures are the key solution to print the finest featured patterns without stochastic printing failures. Herein we overview our recent progress in metal-containing photoresist materials and report our preliminary results of deep ultraviolet (DUV) patterning with a new organic single-component molecular glass photoresist that possesses ultimate material heterogeneity.