Emergence of Dielectric Properties by Doping of Semi‐Transition Metal in Semiconductor Complex Perovskite Oxide

Abstract The effect of zinc substitution at the Cu 2+ site and germanium substitution at the Ti 4+ site in bismuth copper titanate, Bi 2/3 Cu 3 Ti 4 O 12 , is investigated. Composition with x = 0.05 is synthesized by semi‐wet route in the system Bi 2/3 Cu 3 Ti 4− x Ge x O 12 (BCTGO) and Bi 2/3 Cu 3− x Zn x Ti 4− x Ge x O 12 (BCZTGO) that are sintered at 1123 K for 8 h. Crystal structure has remained cubic. The phase formations of these ceramics are confirmed by the X‐ray diffraction. The microstructural analysis of the samples is done by scanning electron microscopy and tunneling electron microscopy. Elemental analysis is performed by energy dispersive X‐ray spectroscopy. X‐ray photoelectron spectroscopy suggests that all elements present in these ceramics are in proper oxidation states. The dielectric constant is found high for BCTGO‐0.05 ceramic. The specific capacitances of BCTGO‐0.05 and BCZTGO‐0.05 are found to be 13.05 and 15.7 F g −1 , respectively. Optical band gap values ( E g ) of BCTGO‐0.05 and BCZTGO‐0.05 ceramics are found as 1.77 and 1.91 eV.