A study on sodium alginate based memristor: From typical to self-rectifying

In this paper, a fabrication strategy that is compatible with the typical memristor (TM) and the self-rectifying memristor (SRM) is proposed. By modulating the concentration of ZnO NPs in SA (sodium alginate) based memristor, the device will transition from TM to SRM. The Ag/SA + ZnO NPs/ITO device exhibits a great rectification effect under a low operating voltage, with a large ON/OFF parameter and very good self-rectifying properties. At the same time, by changing the concentration of ZnO NPs and voltage frequency, the adjustable effect of memristors can be achieved in the device. These results will be helpful to promote the development of flexible electronics, intelligent computing, and bionics.