双层
钙钛矿(结构)
钝化
能量转换效率
材料科学
钙钛矿太阳能电池
图层(电子)
光伏系统
太阳能电池
开路电压
化学工程
纳米技术
电压
光电子学
化学
工程类
膜
电气工程
生物化学
作者
Nitin Bansal,Shivam Porwal,Himanshu Dixit,Dinesh Kumar,Trilok Singh
标识
DOI:10.1002/ente.202201395
摘要
The interfacial defects or imperfections in the multilayer perovskite solar cells (PSCs) are detrimental for efficient and stable devices. To produce highly efficient and stable PSCs, a bilayer between the interfaces of electron‐transport material/perovskite and perovskite/hole‐transport material can be useful for suppressing recombinations at these interfaces. To passivate the interfacial defects at the perovskite/SnO 2 and perovskite/Spiro‐OMeTAD for three absorber materials (CsPbI 3 , FAPbI 3, and Cs 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 ) 3 ), a thin layer of WO 3 and poly‐bathocuproine interfacial layer is explored using solar cell capacitance simulation in 1D. The optimized device photovoltaic performances significantly improve using bilayers. The power conversion efficiency for the FAPbI 3 ‐based PSCs in bilayer configuration is more than 12% as compared to pristine, whereas open‐circuit voltage is improved by over 13%. The enhancement in device performance is attributed to the reduction of interfacial defects at both the electron transport layer/perovskite and perovskite/hole transport layer interfaces. The proposed interface modification strategy provides a novel approach for fabricating efficient perovskite devices.
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