Microstructure evolutions of SiC whiskers at high temperature and its effects on silicon carbide ceramics

SiC whisker with a single-crystal structure is promising in enhancing the strength and toughness of advanced structural ceramics, owing to its excellent properties. However, studies on its microstructure evolution at high temperature (>2000 °C) are scarce. Herein, SiC whiskers were calcined at 2100 °C, and XRD, SEM, and TEM were employed to analyze microstructure evolutions. Compared with raw whiskers, XRD results indicated serious annihilation of stacking faults after calcination. The annihilation led to the fracture of whiskers and the formation of β-SiC grains, and then partial grains underwent the phase transformation to form hexagonal prism and triangular prism α-SiC grains with diameters of about 10 μm, according to SEM and TEM results. Furthermore, SiC ceramics containing different whisker contents were innovatively fabricated by pressureless solid-state sintering. The flexural strength and fracture toughness of SiC ceramic containing 10 vol% whiskers were 540 MPa and 5.1 MPa m0.5, resulting in 38% and 11% higher values than those without whiskers, respectively.