Polarization-sensitive short-wave infrared photodetector with high responsivity enabled by PdSe2/Bi2O2Se heterostructure

Short-wave infrared (SWIR) polarized detectors, renowned for their high-resolution imaging and atmospheric penetration capabilities, are pivotal for advancing autonomous navigation, industrial automation, and space communications. The responsivity of commercial InGaAs photodetectors (typically ∼1 A/W at 1550 nm) serves as a key benchmark for high-performance detection at this wavelength. However, achieving higher responsivity and potentially streamlining the fabrication process remain research goals. Herein, we present a PdSe2/Bi2O2Se heterostructure detector that synergistically utilizes the effective separation of photogenerated electron–hole pairs and photogating effect to achieve breakthrough performance in SWIR. A high responsivity of 21 A/W, an external quantum efficiency of 1680%, and a specific detectivity of 5.7 × 109 Jones at 1550 nm were demonstrated. Simultaneously, it achieves a fast response time (131/492 μs) and polarization-sensitive functionality. High-resolution SWIR and polarized light imaging were also demonstrated. These findings outline an approach to developing miniaturized, room-temperature SWIR detectors with high-performance metrics.