自旋电子学
石墨烯
自旋晶体管
旋转阀
自旋(空气动力学)
材料科学
纳米技术
旋转泵
自旋扩散
电荷(物理)
逻辑门
自旋工程
自旋霍尔效应
自旋极化
凝聚态物理
电气工程
物理
工程类
量子力学
磁场
磁电阻
电子
热力学
铁磁性
作者
Pramod Ghising,Chandan Biswas,Young Hee Lee
标识
DOI:10.1002/adma.202209137
摘要
An alternative to charge-based electronics identifies the spin degree of freedom for information communication and processing. The long spin-diffusion length in graphene at room temperature demonstrates its ability for highly scalable spintronics. The development of the graphene spin valve (SV) has inspired spin devices in graphene including spin field-effect transistors and spin majority logic gates. A comprehensive picture of spin transport in graphene SVs is required for further development of spin logic. This review examines the advances in graphene SVs and their role in the development of spin logic devices. Different transport and scattering mechanisms in charge and spin are discussed. Furthermore, the on/off switching energy between graphene SVs and charge-based FETs is compared to highlight their prospects for low-power devices. The challenges and perspectives that need to be addressed for the future development of spin logic devices are then outlined.
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