同质结
异质结
材料科学
太阳能电池
混合太阳能电池
钝化
聚合物太阳能电池
光电子学
量子点太阳电池
能量转换效率
晶体硅
钙钛矿(结构)
光伏系统
纳米技术
图层(电子)
化学
电气工程
结晶学
工程类
作者
Kenji Yamamoto,Kunta Yoshikawa,Hisashi Uzu,Daisuke Adachi
标识
DOI:10.7567/jjap.57.08rb20
摘要
Abstract High-efficiency back-contact heterojunction crystalline Si (c-Si) solar cells with record-breaking conversion efficiencies of 26.7% for cells and 24.5% for modules are reported. The importance of thin-film Si solar cell technology for heterojunction c-Si solar cells with amorphous Si passivation layers in improving conversion efficiency and reducing production cost is demonstrated. Our attempts to reduce the production cost of a heterojunction c-Si solar cell by applying a SiO x layer prepared by a plasma-enhanced CVD method are presented. The characteristics of heterojunction c-Si solar cells are clarified by comparing them with those of practical homojunction solar cells, and crucial targets for industrialization of back-contact heterojunction c-Si solar cells are discussed. Owing to the recent improvement of c-Si solar cells and perovskite solar cells, conversion efficiencies over 30% have become a realistic target by using a two-terminal tandem structure with a heterojunction c-Si solar cell and a perovskite solar cell.
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