Photochemical Hole Burning in Highly Doped TPP/PMMA Systems. Energy Migration and Stabilization of Burnt Holes for Subsequent Hole-Burnings

Photochemical hole-burning experiments were performed on highly doped TPP/PMMA systems. Kinetics of the photophysical processes which compete with the PHB photochemistry, including the interguest energy migration, was analyzed. Reduction of the hole-filling efficiency accompanied by subsequent hole-burning was observed when ZnTPP was also incorporated in the system. Applicability of highly doped host-guest systems to the practical PHB optical memory was discussed.