神经形态工程学
记忆电阻器
电容感应
兴奋性突触后电位
电容耦合
材料科学
突触后电流
计算机科学
光电子学
突触重量
突触后电位
神经科学
物理
联轴节(管道)
人工神经网络
癫痫
电子工程
刺激(心理学)
生物系统
人工神经元
瞬态响应
电容器
瞬态(计算机编程)
卷积(计算机科学)
纳米技术
电容
动力学(音乐)
电阻抗
作者
Xiang Zhang,Lin Ge,Siyuan Li,Hao Sun,Fengxia Yang,Zhi Zhan,Xiaofei Dong,Jianbiao Chen,Xuqiang Zhang,Jiangtao Chen,Yun Zhao,Yan Li
出处
期刊:Nano Letters
[American Chemical Society]
日期:2026-01-08
卷期号:26 (2): 871-879
被引量:2
标识
DOI:10.1021/acs.nanolett.5c05639
摘要
-based capacitive memristor is presented, which emulates a biosynaptic neuron through an LIF-type excitatory postsynaptic current (EPSC) for epileptic seizure monitoring. The device functions with stable coupled bipolar switching and capacitive response under both DC and pulsed operation over 500 consecutive cycles; in particular, single-pulse stimulus triggers a highly reproducible LIF-type three-stage EPSC feature. Various stimulation protocols enable diverse synaptic behaviors, and the device response can transition from transient to persistent states by tuning readout-delay. Mechanistic analysis attributes the capacitive memristor behavior to the coupling effect between interfacial polarization/displacement current and dynamic Schottky barrier modulation. By employing measured LIF-type EPSC as convolution kernels for raw electroencephalogram (EEG) signals in a lightweight one-dimensional convolutional neural network (1D-CNN), a 95.8% classification accuracy for three epilepsy-related states is achieved on the Bonn dataset. The results highlight the potential of the capacitive memristor for on-chip epileptic seizure monitoring.
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