光电探测器
光电子学
材料科学
紫外线
能量(信号处理)
硅
宽禁带半导体
光电导性
带隙
电气工程
砷化镓
紫外线辐射
光学
电压
作者
L Zhang,Zexin Yao,Xiaoqing Qiu,Jiancheng Li,Zhongqiang Hu,Hai Zhou
标识
DOI:10.1109/led.2026.3692808
摘要
Halide perovskites have attracted tremendous attention in optoelectronic devices due to their excellent photophysical properties. However, they are prone to photodegradation under ultraviolet (UV) light, limiting their applications in UV photodetectors (PDs). Here, energy band engineering is adopted to achieve efficient and stable perovskite UVPDs, in which the band gap of the CsPbCl3 microcrystals (MCs) is regulated by Rb doping. The fabricated Cs0.84Rb0.16PbCl3 MC film exhibits wider bandgap and improved optical properties. Finally, under 365 nm light, the Cs0.84Rb0.16PbCl3 perovskite PDs show superior UV detection performance including an open-circuit voltage of 0.84 V, an on-off ratio of 2.81×106, a responsivity of 0.6 A/W and a detectivity of 3.48×1012 Jones. Moreover, the PDs exhibit outstanding stability to UV light and temperature. This work provides a new strategy for the fabrication of high-performance perovskite UVPDs.
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