化学
八面体
最大值和最小值
范德瓦尔斯力
电子结构
半导体
同系序列
结晶学
晶体结构
带隙
电子能带结构
化学物理
系列(地层学)
分子
Crystal(编程语言)
基准集
纳米技术
凝聚态物理
原子电子跃迁
定义明确
作者
M. Viti,Zhi Li,Stephen S. Kao,Christopher Wolverton,Mercouri G. Kanatzidis
摘要
Moving beyond the engineering of known materials and elemental substitution within common structure types is critical for designing unique properties. Here, we present a new homologous series, ACu2Q2(MQ2)n (A = Sr, Ba, 2Na; MQ2 = ZrS2, HfSe2), establishing 11 new members. In β-BaCu2Q2 and Na2Cu2Se2 (n = 0), the [Cu2Q2]2- motifs extend in two dimensions, whereas those in α-BaCu2Q2 extend in three dimensions. Hence, there are two structural evolutions within the ACu2Q2(MQ2)n family driven by the polymorphism of the host structures. MQ2 (n → ∞) displays 2D layers of edge-sharing [MQ6]8- octahedra that are 1-octahedron-thick and connected via van der Waals bonding. Each insertion of MQ2 into ACu2Q2 incorporates [MQ6]8- octahedra extending infinitely in one direction, confined to being 1-octahedron-thick in the second direction, with n controlling the number of [MQ6]8- octahedra in the third direction. Therefore, increasing n predictively expands the [Cu2MnQ2n+2]2- network in the direction controlled by n and relative to the A+/A2+ ions. We demonstrate that for a given set of elements, one can enforce a "Host(Insertion)n" formula to systematically evolve both crystal and electronic structures from the host (n = 0) to the insertion (n → ∞) materials through intermediate values of n. Specifically, the energetic misalignment of the electronic band extrema of the parents predictively determines the band extrema and the resulting band gaps of all intermediate n members.
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